发明名称
摘要 A method of manufacturing silicon carbide including reacting, in a temperature range of 370 to 800° C., (A) one selected from the group consisting of an alloy containing at least an Si element and one or more kinds of transition metal elements, a mixture containing metal silicon powder and transition metal powder, and a mixture of metal silicon powder and a transition metal compound with (B) one or more kinds of substituted or unsubstituted hydrocarbons selected from the group consisting of a chain saturated hydrocarbon, a chain unsaturated hydrocarbon, a cyclic saturated hydrocarbon, an alcohol, and an aromatic hydrocarbon. The manufacturing method can provide a sufficient conversion ratio from raw materials at low temperatures and powdery silicon carbide having a small particle size and small amounts of impurities.
申请公布号 JP4856878(B2) 申请公布日期 2012.01.18
申请号 JP20050021614 申请日期 2005.01.28
申请人 发明人
分类号 C01B31/36;C04B35/626 主分类号 C01B31/36
代理机构 代理人
主权项
地址