CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FORMING SEMICONDUCTOR THIN FILM USING THE SAME

摘要

PURPOSE: A chemical vapor deposition apparatus and a semiconductor epitaxial thin film manufacturing method using the same are provided to suppress the generation of a bending phenomenon in a wafer due to a thermal stress difference, thereby preventing damage to the wafer. CONSTITUTION: A reaction chamber(10) is comprised of a dual structure of a cylindrical inner pipe(11) and an outer pipe(12). A wafer holder(20) loads a plurality of wafers(W) for growing a thin film with a predetermined interval. The wafer holder is connected to a rotation driving part(50) protected by a heat insulation plate. A gas supply part(30) comprises a gas lines and an injection nozzle(33) for supplying a reaction gas. The gas supply part comprises a cooling line(32) for cooling the reaction gas.