VERTICAL STRUCTURED GROUP III n-TYPE NITRIDE-BASED SEMICONDUCTOR DEVICE COMPRISING NITROGEN POLAR SURFACE TREATED GA ION IMPLANTATION, AND LIGHT EMITTING DIODES COMPRISING THE SAME

摘要

PURPOSE: A group three n-type nitride semiconductor device of a vertical structure which includes a Ga ion implanted nitrogen polar surface and a light emitting diode device including same are provided to include Ga ions injected between an n-type nitride clad layer and an electrode structure, thereby preventing diffusion of the Ga ions of the n-type nitride clad layer to the electrode structure. CONSTITUTION: An n-type nitride clad layer(20), a nitride active layer, and a p-type nitride clad layer are arranged on a growth substrate. A reflective p-type ohmic contact electrode structure is arranged on the p-type nitride clad layer. A supporting substrate is arranged on the reflective p-type ohmic contact electrode structure. A Ga ion(70) injected on the n-type nitride clad layer is arranged. An electrode structure(80) is arranged on the injected Ga ions.