发明名称 |
Electroconductive tin oxide having high mobility and low electron concentration |
摘要 |
Tin oxide having high mobility and a low electron concentration, and methods for producing layers of the tin oxide layers on a substrate by atmospheric pressure chemical vapor deposition (APCVD) are disclosed. The tin oxide may undoped polycrystalline n-type tin oxide or it may be doped polycrystalline p-type tin oxide. When the layer of tin oxide is formed on a crystalline substrate, substantially crystalline tin oxide is formed. Dopant precursors for producing doped p-type tin oxide are also disclosed. |
申请公布号 |
US8097302(B2) |
申请公布日期 |
2012.01.17 |
申请号 |
US20100684354 |
申请日期 |
2010.01.08 |
申请人 |
KOROTKOV ROMAN Y.;RUSSO DAVID A.;CULP THOMAS D.;SILVERMAN GARY S.;BEAUJUGE PIERRE;ARKEMA INC. |
发明人 |
KOROTKOV ROMAN Y.;RUSSO DAVID A.;CULP THOMAS D.;SILVERMAN GARY S.;BEAUJUGE PIERRE |
分类号 |
C23C16/06;B05D5/12;C23C16/40;H01B1/08;H01B1/10 |
主分类号 |
C23C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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