发明名称 Sensor device with reduced parasitic-induced error
摘要 A device (110) includes a sensing element (26) having drive nodes (34, 36) and sense nodes (42, 44). Parasitic capacitance (22) is present between drive node (34) and sense node (42). Likewise, parasitic capacitance (24) is present between drive node (36) and sense node (44). When a drive signal (56) is applied between drive nodes (34, 36), a parasitic current (70) between drive and sense nodes (34, 42) and a parasitic current (72) between drive and sense nodes (36,44) is created due to the parasitic capacitances (22, 24). A capacitive network (112) is coupled between the drive node (36) and the sense node (42) to create a correction current (134) through capacitive network (112) that cancels parasitic current (70). Likewise, a capacitive network (114) is coupled between the drive node (34) and the sense node (44) to create a correction current (138) through capacitive network (112) that cancels parasitic current (72).
申请公布号 US8096179(B2) 申请公布日期 2012.01.17
申请号 US20090421513 申请日期 2009.04.09
申请人 BIEN DAVID E.;MIJUSKOVIC DEJAN;FREESCALE SEMICONDUCTOR, INC. 发明人 BIEN DAVID E.;MIJUSKOVIC DEJAN
分类号 G01C19/00 主分类号 G01C19/00
代理机构 代理人
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