发明名称 |
Integration of passive device structures with metal gate layers |
摘要 |
A passive device structure includes an unpatterned metal gate layer formed in a passive device region of a semiconductor device; an insulator layer formed upon the unpatterned metal gate layer; a semiconductor layer formed upon the insulator layer; and one or more metal contact regions formed in the semiconductor layer; wherein the insulator layer prevents the metal gate layer as serving as a leakage current path for current flowing through a passive device defined by the semiconductor layer and the one or more metal contact regions. |
申请公布号 |
US8097520(B2) |
申请公布日期 |
2012.01.17 |
申请号 |
US20090543544 |
申请日期 |
2009.08.19 |
申请人 |
BU HUIMING;CHAKRAVARTI SATYA N.;GUO DECHAO;WONG KEITH KWONG HON;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BU HUIMING;CHAKRAVARTI SATYA N.;GUO DECHAO;WONG KEITH KWONG HON |
分类号 |
H01L27/02 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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