发明名称 |
Nonvolatile memory device using variable resistive element |
摘要 |
A nonvolatile memory device may include a memory cell array with a plurality of nonvolatile memory cells arranged in an array of rows and columns. Each of a plurality of bit lines may be coupled to nonvolatile memory cells in a respective one of the columns of the array, and each of a plurality of column selection switches may be coupled to a respective one of the bit lines. A column decoder may be coupled to the plurality of column selection switches, and the column decoder may be configured to select a first one of the bit lines using a first column selection signal having a first signal level applied to a first one of the column selection switches. The column decoder may be further configured to select a second one of the bit lines using a second column selection signal having a second signal level applied to a second one of the column selection switches with the second signal level being different than the first signal level. |
申请公布号 |
US8098518(B2) |
申请公布日期 |
2012.01.17 |
申请号 |
US20090476875 |
申请日期 |
2009.06.02 |
申请人 |
KIM HYE-JIN;CHOI BYUNG-GIL;KIM DU-EUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYE-JIN;CHOI BYUNG-GIL;KIM DU-EUNG |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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