| 摘要 |
<p>PURPOSE: A method for forming an etching barrier using a shadow effect and a method for manufacturing one side contact of a vertical transistor are provided to prevent an excessive impurity doping by depositing a doping barrier with a liner type. CONSTITUTION: Walls(101) are formed by a trench between semiconductor substrates(100). A surface of a semiconductor substrate is deposited with directivity in an incline direction. An etching barrier(400) is formed to expose one edge of a trench by a shadow effect.</p> |
