发明名称 |
Pre-charge sensing scheme for non-volatile memory (NVM) |
摘要 |
The pipe effect can significantly degrade flash performance. A method to significantly reduce pipe current and (or neighbor current using a pre-charge sequence) is disclosed. A dedicated read order keeps the sensing node facing the section of the pipe which was pre-charged. The technique involves pre-charging several global bitlines (such as metal bitlines, or MBLs) and local bitlines (such as diffusion bitlines, or DBLs). The pre-charged global bitlines are selected according to a pre-defined table per each address. The selection of the global bitlines is done according to whether these global bitlines will interfere with the pipe during the next read cycle. |
申请公布号 |
US8098525(B2) |
申请公布日期 |
2012.01.17 |
申请号 |
US20080232437 |
申请日期 |
2008.09.17 |
申请人 |
HORESH YAAL;DADASHEV OLEG;BETSER YORAM;HARUSH AVRI;SPANSION ISRAEL LTD |
发明人 |
HORESH YAAL;DADASHEV OLEG;BETSER YORAM;HARUSH AVRI |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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