Semiconductor device having projecting electrode formed by electrolytic plating, and manufacturing method thereof

摘要

A semiconductor device includes a semiconductor substrate, and a plurality of wiring lines provided on one side of the semiconductor substrate, each of the wiring lines having a connection pad portion. An overcoat film is provided on the wiring lines and the one side of the semiconductor substrate. The overcoat film has a plurality of openings in parts corresponding to the connection pad portions of the wiring lines. A plurality of foundation metal layers are respectively provided on inner surfaces of the openings of the overcoat film and electrically connected to the pat portions of the wiring lines. A plurality of projecting electrodes are respectively provided on the foundation metal layers in the openings of the overcoat film.