Methods for processing substrates in a dual chamber processing system having shared resources
摘要
Methods for processing substrates in dual chamber processing systems comprising first and second process chambers that share resources may include performing a first internal chamber clean in each of the first process chamber and the second process chamber; and subsequently processing a substrate in one of the first process chamber or the second process chamber by: providing a substrate to one of the first process chamber or the second process chamber; providing a process gas to the first process chamber and the second process chamber; forming a plasma in only the one of the first process chamber or the second process chamber having the substrate contained therein; and providing an inert gas to the first process chamber and the second process chamber via one or more channels formed in a surface of respective substrate supports disposed in the first process chamber and the second process chamber while processing the substrate.
申请公布号
US8097088(B1)
申请公布日期
2012.01.17
申请号
US201113088791
申请日期
2011.04.18
申请人
LIM EU JIN;DIAZ, JR. ADAUTO;SCHWARZ BENJAMIN;CRUSE JAMES P.;HARDY CHARLES;APPLIED MATERIALS, INC.
发明人
LIM EU JIN;DIAZ, JR. ADAUTO;SCHWARZ BENJAMIN;CRUSE JAMES P.;HARDY CHARLES