| 摘要 |
PURPOSE: A plasma processing method and a semiconductor device manufacturing method are provided to suppress pattern thinning effects due to a side etching process, thereby effectively eliminating sediment including metal deposited on a lateral wall of a pattern. CONSTITUTION: A susceptor supporting table(4) for placing a wafer(W) within a vacuum processing chamber(2) is installed. A susceptor(5) comprising a lower electrode is installed on the upper part of the susceptor supporting table. A refrigerant chamber(7) is installed in the inside of the susceptor supporting table. A focus ring(15) is arranged in the upper end peripheral part of the susceptor. An upper electrode(21) is arranged in the upper part of the vacuum processing chamber while placing an insulating material(22) between the upper electrode and vacuum processing chamber. An exhaust pipe(31) is connected to the bottom part of the vacuum processing chamber. |
