LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICE COMPRISING THE SAME

摘要

PURPOSE: A light emitting diode and a light emitting device package including the same are provided to reduce crystal defects of the light emitting diode by including a super lattice layer of an InN layer and an AlInGaN layer in semiconductor layers. CONSTITUTION: A first semiconductor layer(200) is formed on a substrate(100). An active layer(300) is formed on the first semiconductor layer. A second semiconductor layer(400) is formed on the active layer. The first semiconductor layer, the active layer, and the second semiconductor layer comprise a super lattice layer of an InN layer and an AlInGaN layer in semiconductor layers. A buffer layer(110) is formed between the substrate and the first semiconductor layer.