| 摘要 |
PURPOSE: A schottky diode having a combined field plate and a guard ring is provided to offer a leakage current which is reduced by including a break down voltage improved structure consisting of an opposite conductive type. CONSTITUTION: A merged guard ring and a field plate(110) form a schottky contact domain(130). A schottky metal(120) is partly formed on the schottky contact domain. The schottky metal is partly formed on the merged guard ring and the field plate. A part of the merged guard ring and field plate is contacted to a voltage maintenance layer(122). A schottky contact is formed between the schottky metal and the voltage maintenance layer. The merged guard ring and the field plate are a p-type material and include GaN.
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