| 摘要 |
<p>PURPOSE: A method for manufacturing the hole pattern of a semiconductor device is provided to improve asymmetry of the hole pattern by eliminating a space pattern having asymmetry in advance. CONSTITUTION: A photosensitive pattern(16) of a pillar type is formed on a fourth hard mask layer(14). A space pattern is formed in the sidewall of the photosensitive pattern of the pillar type. The fourth hard mask layer and a third hard mask layer are etched by using the space pattern as an etching barrier wall. The fourth hard mask layer is eliminated. Second and first hard mask layers(12,11) are etched by using the third hard mask layer as the etching barrier wall. An etched layer(10) is etched by using the first hard mask layer as the etching barrier wall and an opening part is formed.</p> |
