发明名称 |
GEGEN KONZENTRIERTE WÄSSRIGE BASE BESTÄNDIGER NEGATIV-PHOTORESIST FÜR SILIZIUM-NASSÄTZUNG OHNE SILIZIUMNITRID |
摘要 |
New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes a first polymer prepared from a styrene and an acrylonitrile, and a second polymer comprising epoxy-containing monomers (and preferably phenolic-containing monomers). The photoresist layer comprises a photoacid generator, and is preferably negative-acting. |
申请公布号 |
AT541240(T) |
申请公布日期 |
2012.01.15 |
申请号 |
AT20080730646T |
申请日期 |
2008.02.25 |
申请人 |
BREWER SCIENCE, INC. |
发明人 |
ZHONG, XING-FU;FLAIM, TONY;MALHOTRA, JYOTI |
分类号 |
G03F7/004 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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