METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent an active area from falling down and a silt by minimizing etch loading effect. CONSTITUTION: A first etch mask pattern(15A) and a second etch mask pattern(20A) of a line type are formed in the upper part of a substrate(10). A space pattern(19A) is formed between first and second etch mask patterns. A photosensitive pattern(22) is formed in the upper part of the first and second etch mask pattern. The first and the second etch mask pattern are etched by using the photosensitive pattern as an etching barrier. A dummy active area is formed by etching the substrate using the first and second etch mask patterns as an etch barrier.