发明名称 NON-VOLATILE MEMORY AND OPERATION METHOD OF THW SAME
摘要 PURPOSE: A nonvolatile memory and an operating method thereof are provided to reduce a peak current by completely discharging or pre-charging a selected bit line by a page buffer unit after the selected bit lien is partially pre-charged. CONSTITUTION: An even bit line is connected to an even cell string. An odd bit line is connected to an odd cell string(320). A bit line precharge unit(330) precharges the even bit line and the odd bit line before a program operation. The bit line precharge unit precharges the bit line among the even bit line and the odd bit line below a target value and precharges the non-selected bit line to the target value.
申请公布号 KR20120004740(A) 申请公布日期 2012.01.13
申请号 KR20100065390 申请日期 2010.07.07
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, WON BEOM
分类号 G11C16/34;G11C16/24;G11C16/30 主分类号 G11C16/34
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