METHOD OF FORMING METAL SILICIDE AND METHOD FOR FABRICATING 3-DIMENSIONAL MEMORY DEVICE USING THE SAME

摘要

PURPOSE: A method of forming metal silicide and a method for fabricating 3-dimensional memory device using the same are provided to prevent the deformation of a formed variable resistive layer by forming a nickel silicide under 500°C. CONSTITUTION: Impurity for preventing diffusion is implanted on the surface of a silicon film(11). A Ni film(12) for forming the nickel silicide is formed on the silicon film. A capping layer(13) is formed on the Ni film. The nickel silicide(14) is formed on the surface of a silicon film contacting with the Ni film through a first thermal process. A wet etching(103) is performed to remove the capping layer and the Ni film.