| 摘要 |
<p>PURPOSE: A method for forming a semiconductor device is provided to obtain an overlay margin between patterns by connecting a part of separated spacers to be inclined. CONSTITUTION: A hard mask film(111) is formed on an under film(109). A plurality of first subsidiary patterns is formed on the hard mask film. A spacer(115) is formed on sidewalls of first subsidiary patterns. A spacer connection part(115a) is formed by connecting a part of the spacers. A second subsidiary pattern is formed on the spacer connection part.</p> |
