| 摘要 |
PURPOSE: A method for operating a program of a nonvolatile memory device is provided to prevent the deterioration of reliability in a verification operation by preventing a source bouncing. CONSTITUTION: A program of memory cells is executed. A first verification operation of the memory cells maintaining an erase state is executed. A second verification operation of the remaining memory cells is executed. The program is operated by applying a program voltage to a word line(Sel. WL) connected to the memory cells. |
