| 摘要 |
PURPOSE: A semiconductor memory device is provided to suppress potential variation of a source selection line and a drain selection line due to coupling noise of a well, a junction area, a bit line, and an adjacent word line by increasing the volume of the drain selection line and the source selection line. CONSTITUTION: Gate lines of a plurality of memory cells are parallel on a semiconductor substrate. The gate lines(SSL) of selection transistors are arranged on the semiconductor substrate adjacent to gate lines of the outermost memory cell. A plurality of metal wirings are connected through a plurality of contacts and the gate lines of the selection transistors. The plurality of memory cells are serially connected between the selection transistors. |
