| 摘要 |
<p>PURPOSE: A non-volatile memory device and a forming method thereof are provided to prevent the phenomenon that an electric field is focused on an edge of an active area by forming a notch groove in a sidewall of a protrusion portion. CONSTITUTION: A semiconductor substrate(101) includes an plurality of protrusions(A) which is separated. Both edges(R) of a protrusion portion are formed to be round. A notch groove(H) is formed in a side wall of the protrusion portion. A device isolation film(111) is formed in a trench(T). A memory cell comprises a stacked-gate consisting of a tunnel insulating layer(103), a floating gate(105), a dielectric film(113), and a control gate(115).</p> |
