| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce the area of a transistor by forming the transistor of a sense amplifier into a multilayer structure. CONSTITUTION: A first gate(110) is placed in a semiconductor substrate(100). A first junction area(117) is formed in both sides of the first gate. A second gate(130) is included in the upper portion of the semiconductor substrate. The second gate comprises a gate poly silicon layer(130a), a gate metal layer(130b), and a gate hard mask layer(130c). A second junction area(123) is formed in both sides of the second gate.</p> |
