THIN FILM TRANSISTOR SUBSTRATE HAVING LOW RESISTANCE BUS LINE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor substrate and a manufacturing method thereof are provided to low the resistance of wiring by forming the cross section area of wiring to be larger. CONSTITUTION: A gate insulating layer(GI) is placed between a gate wiring(GL) and a data line(DL) which are crossed. The gate wiring supplies a gate signal to the gate electrode(G) of a thin film transistor. The data line supplies a pixel signal to a pixel electrode(PXL) through the drain electrode(D) of the thin film transistor. A common wiring(CL) is formed to be parallel with the gate wiring while being placed across a pixel region. A common electrode(COM) is formed in the pixel region while being connected to the common wiring.