SYSTEM AND METHOD OF DOSAGE PROFILE CONTROL

摘要

PURPOSE: A system and method of a dosage profile control is provided to minutely control the implant of a dopant into a semiconductor wafer. CONSTITUTION: An ion source(103) generates ion beam(119). An linear accelerator(107) applies additional energy to coherence ion beam(121). The linear accelerator controls the phase of the electromagnetic field and changes the electromagnetic field periodically. An end station(113) accepts a wafer control unit(115) operating a wafer(123). A controller(117) controls the operation parameters of an ion-implanter(100).