发明名称 SEMICONDUCTOR MEMORY DIVECE
摘要 PURPOSE: A semiconductor memory device is provided to minimize current consumption and toggle an inner clock signal by generating the inner clock signal toggled in a necessary section for a circuit operation. CONSTITUTION: A plurality of inner clock generators(230,240) receive an outer clock signal. A plurality of inner clock generators generate a plurality of inner clock signals in response to a plurality of clock control signals. A clock control unit(220) generates a plurality of clock control signals for limiting a toggling operation for each inner clock signal according to an operation mode defined by a plurality of outer command signals. A clock buffering unit(210) buffers the outer clock signal.
申请公布号 KR20120004682(A) 申请公布日期 2012.01.13
申请号 KR20100065315 申请日期 2010.07.07
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, BO YEUN
分类号 G11C7/22;G11C7/10 主分类号 G11C7/22
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