| 摘要 |
<p>Apparatus and methods for electronic circuit protection are disclosed. In one embodiment, an apparatus (1) comprises a substrate (247) that includes an n-well (251b) and a p-well (254b) adjacent the n-well. An n-type active area (243c) and a p-type active area (242c) are disposed in the n-well. The p-type active area, the n-well, and the p-well are configured to operate as an emitter, a base, and a collector of an PNP bipolar transistor (22), respectively, and the p-type active area surrounds at least a portion of the n-type active area so as to aid in recombining carriers injected into the n-well from the p-well before the carriers reach the n-type active area. The n-well and the p-well are configured to operate as a breakdown diode (27), and a punch-through breakdown voltage between the n-well and the p-well is lower than or equal to about a breakdown voltage between the p-type active area and the n-well.</p> |
