发明名称 METHOD OF PRODUCING SUBSTRATE FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE
摘要 A manufacturing method of a substrate for a semiconductor element, wherein a first step includes: forming a first and second photosensitive resin layer on a first and second surface of a metal plate, respectively; forming a first and second resist pattern on the first and second surface, for forming a connection post and a wiring pattern, respectively. A second step includes: forming the connection post and wiring pattern; filling in a premold liquid resin to the first surface which was etched; forming a premold resin layer by hardening the premold liquid resin; performing a grinding operation on the first surface, and exposing an upper bottom surface of the connection post from the premold resin layer. A groove structure is formed by the first and second steps, wherein a depth of the groove is up to an intermediate part in a thickness direction of the metal plate.
申请公布号 KR20120004423(A) 申请公布日期 2012.01.12
申请号 KR20117022639 申请日期 2010.03.15
申请人 TOPPAN PRINTING CO., LTD. 发明人 MANIWA SUSUMU;TSUKAMOTO TAKEHITO;TODA JUNKO
分类号 H01L23/12;H01L23/50 主分类号 H01L23/12
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