| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve a throughput by omitting the CMP(Chemical Mechanical Polishing) process of a bit line hard mask film and the deposition and etching process of a following interlayer dielectric layer. CONSTITUTION: A gate, in which a gate electrode(41) and a gate hard mask film(42) are laminated on a substrate(31), is formed. An etching stop layer(50) is formed in the front side including the gate. A bit line contact(52) is formed by etching the etching stop layer and the gate hard mask film. A conductive film is formed in the front side to fill the bit line contact. A bit line(53) is formed by etching the conductive film.
|
