SEMICONDUCTOR STACKED STRUCTURE AND ULTRAVIOLET SENSOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor stacked structure capable of forming a light receiving layer of group III nitride with excellent crystallinity, and to provide an ultraviolet sensor using the structure.

SOLUTION: A semiconductor stacked structure 1 is composed such that a group III nitride underlying layer 4 and a group III nitride layer 5 containing at least Ga are sequentially stacked on a predetermined substrate 3, and then an AlyInxGa1-x-yN light receiving layer 6 composed of group III nitride containing In and Al, or at least one of them is provided on the stack. An ultraviolet sensor 2 is manufactured such that a Schottky electrode 7s and an ohmic electrode 7o are formed on the surface of the semiconductor stacked structure.

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