| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance processing speed, film deposition rate and film quality by increasing heat transfer efficiency of a supporting glass of a thinned Si substrate for the through silicon via hole (TSV) processing. <P>SOLUTION: TSV processing speed is enhanced by mounting a thinned semiconductor substrate 19, having an irregular pattern 15 consisting of recesses 16 and protrusions 17 formed on the rear face 12 side and stuck to the surface 13 side of a reusable supporting glass substrate 11 by adhesive agent 24, on an ESC electrode 2, thereby promoting cooling of the semiconductor substrate 19. <P>COPYRIGHT: (C)2012,JPO&INPIT |
