| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a structure preventing a large protrusion of a bump from a metal layer as much as possible. <P>SOLUTION: The semiconductor device comprises a substrate 12, a plurality of electrode pads 20 formed on the substrate 12, and a protection film 14 formed to cover peripheral edges of the electrode pads 20 and the substrate 12 and having through-holes 16 formed corresponding the respective electrode pads 20. An inner wall of each through-hole 16 is formed on a slant 22 toward the outside of the through-hole 16. A metal layer 24 is formed on an exposed surface of the electrode pads 20 exposed from the protection film 14 via the through-hole 16 and to the middle of the slant 22 of the through-hole 16. A bump 18 is bonded to a metal layer 22. <P>COPYRIGHT: (C)2012,JPO&INPIT |
