| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dry etching method and a dry etching apparatus that can achieve an excellent etching characteristic with reducing the cost of facilities. <P>SOLUTION: In a dry etching method, first reaction gas containing hydrogen and second reaction gas containing fluorine are brought into contact with a heating element 110 to generate hydrogen radicals and fluorine radicals, the hydrogen radicals and the fluorine radicals are reacted with the first reaction gas and the second reaction gas to generate etching gas, and a silicon oxide layer on a substrate is etched with the etching gas. Accordingly, the cost of facilities and power required to generate the radicals can be reduced as compared with a conventional radical source using microwaves. <P>COPYRIGHT: (C)2012,JPO&INPIT |
