| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which enhances breakdown voltage by resolving occurence of discontinuity of material at an area contacting an electric field relaxation layer and omitting bent portions from the electric field relaxation layer. <P>SOLUTION: The semiconductor device includes an electric field relaxation layer 3a for providing a peripheral breakdown voltage structure by using a p-type base layer 3. Accordingly, bent portions can be omitted from the electric field relaxation layer 3a. Since only an n<SP POS="POST">-</SP>-type drift layer 2a is a semiconductor which the electric field relaxation layer 3a is in contact with, discontinuity of materials does not occur. Consequently, breakdown voltage of an SiC semiconductor device can be enhanced. <P>COPYRIGHT: (C)2012,JPO&INPIT |
