| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device having a plurality of introduction pipes for introducing gases, which can more precisely uniform in-plane distribution of a film thickness and concentration of a thin film. <P>SOLUTION: The semiconductor manufacturing device comprises a plurality of gas introduction pipes 253a-253e connected to a chamber 15 and flowmeters 254a-254e for the respective gas introduction pipes 253a-253e. Accordingly, gas flow rates can be individually controlled depending on a portion that gases are introduced, so that in-plane distribution of a film thickness and concentration of a thin film formed on a semiconductor substrate 60 can be uniformed all together. Specifically, in batch processing, in-plane distribution of a film thickness and concentration of a thin film formed on each of multiple semiconductor substrates 60 can be uniformed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
