Compound Semiconductor Device and Method of Producing the Same

摘要

A semiconductor device comprises an Si substrate 10 and a compound layer 11 of Si1-XGeX disposed on the substrate 10. X is varied from 0 to 0.2 away from the substrate 10 towards the upper surface of the compound layer 11, with the rate of change of X increasing through the layer. The increasing rate of change of X significantly improves the defectivity levels and the surface roughness at the surface of layer 11.