发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING UNDERLYING LAYER |
摘要 |
A method of making a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a <110> direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the <110> direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.
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申请公布号 |
US2012009711(A1) |
申请公布日期 |
2012.01.12 |
申请号 |
US201113238590 |
申请日期 |
2011.09.21 |
申请人 |
KARINO SACHIO;TAKASE EIJI;OOGANE MAKOTO;NAGATAKE TSUYOSHI;KAMADA MICHIRU;NARUI HIRONOBU;OKANO NOBUKATA;SONY CORPORATION |
发明人 |
KARINO SACHIO;TAKASE EIJI;OOGANE MAKOTO;NAGATAKE TSUYOSHI;KAMADA MICHIRU;NARUI HIRONOBU;OKANO NOBUKATA |
分类号 |
H01L33/30;H01L21/20;H01S5/323 |
主分类号 |
H01L33/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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