| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element with leakage current suppressed between a gate electrode and a channel formation region, even in the microfabrication of the size of the gate electrode due to the microfabrication of the semiconductor element, and provide a small semiconductor device with high performance. <P>SOLUTION: One of the problems is solved by manufacturing a semiconductor element having a structure in which an insulation film containing gallium oxide with a specific dielectric constant of 10 or more is formed as a gate insulation film on a semiconductor layer serving as a channel formation region and a gate electrode is formed on the gallium oxide. Another one of the problems is solved by manufacturing a semiconductor device with the semiconductor element. <P>COPYRIGHT: (C)2012,JPO&INPIT |
