| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device provided with an IGBT element region and a diode element region on the same semiconductor substrate which improves detection accuracy of an IGBT detection current and a diode detection current at current detection regions, and inhibits destabilization of detection current at the boundary portion between an IGBT and a diode. <P>SOLUTION: The semiconductor device comprises a current detection region disposed adjacent to an IGBT element region of a main active region with a collector region of the IGBT element region being extended to a collector region of the current detection region, and a current detection region disposed adjacent to a diode element region of the main active region with a cathode region of the diode element region being extended to a cathode region of the current detection region. Accordingly, the IGBT detection current is not influenced by the boundary portion between an IGBT and a diode and is stabilized. Similarly, the diode detection current is stabilized. <P>COPYRIGHT: (C)2012,JPO&INPIT |
