发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor device 1 capable of performing optimum write and read controls even for diversified types of data in consideration of the rewrite frequency, required capacity, and data holding period. <P>SOLUTION: A nonvolatile semiconductor device 1, which accesses a data area 5b divided into predetermined areas by using a nonvolatile semiconductor memory 5 having multilevel cells, includes a management area 5a for storing a write setting which makes each of the areas correspond to a write data type. The write setting is made so as to switch between a multi-level cell and a single-level cell, and to change a write level according to the data type; and on the basis of the write setting, write and read are performed. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012009112(A) 申请公布日期 2012.01.12
申请号 JP20100144485 申请日期 2010.06.25
申请人 OKI ELECTRIC IND CO LTD 发明人 HOSHINO TAKENORI
分类号 G11C16/02 主分类号 G11C16/02
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