METHOD FOR MANUFACTURING A POLYCRYSTALLINE SILICON THIN FILM
摘要
<p>A method for manufacturing a polycrystalline silicon thin film comprises the steps of: forming a metal layer on an insulation substrate; heat-treating the metal layer to form a metal oxide film on the metal layer; stacking an amorphous silicon layer on the metal oxide film; and heat-treating the amorphous silicon layer using the metal layer or metal particles of the oxide film as a catalyst to generate crystalline silicon.</p>
申请公布号
WO2012005389(A1)
申请公布日期
2012.01.12
申请号
WO2010KR04369
申请日期
2010.07.06
申请人
NOKORD CO.,LTD;LEE, WON TAE;CHO, HAN SICK;KIM, SANG KYU