发明名称 METHOD FOR MANUFACTURING A POLYCRYSTALLINE SILICON THIN FILM
摘要 <p>A method for manufacturing a polycrystalline silicon thin film comprises the steps of: forming a metal layer on an insulation substrate; heat-treating the metal layer to form a metal oxide film on the metal layer; stacking an amorphous silicon layer on the metal oxide film; and heat-treating the amorphous silicon layer using the metal layer or metal particles of the oxide film as a catalyst to generate crystalline silicon.</p>
申请公布号 WO2012005389(A1) 申请公布日期 2012.01.12
申请号 WO2010KR04369 申请日期 2010.07.06
申请人 NOKORD CO.,LTD;LEE, WON TAE;CHO, HAN SICK;KIM, SANG KYU 发明人 LEE, WON TAE;CHO, HAN SICK;KIM, SANG KYU
分类号 H01L21/324;H01L21/20;H01L29/786;H01L31/042 主分类号 H01L21/324
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