| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus which constantly keeps a flow rate of an evaporation gas generated from a liquid material to an ALD device using the evaporation gas at a target value. <P>SOLUTION: The substrate treatment apparatus comprises a treatment chamber 32 for treating a wafer 1 and an ALD device in which an inert gas is supplied to a liquid material 80 filled in a tank 81 so as to evaporate the liquid material 80 and the evaporated gas is supplied into the process chamber 32 for deposition on the wafer 1. The ALD device includes a regulator 87 for controlling a flow rate of the inert gas supplied to the tank 81, a pressure sensor 88 for monitoring an absolute pressure inside the tank 81 and a controller 61 for controlling the flow rate of the inert gas by using the regulator 87 based on a pressure value monitored by the pressure sensor 88 so as to keep the absolute pressure in the tank 81 constant. <P>COPYRIGHT: (C)2012,JPO&INPIT |
