| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a surface acoustic wave resonator excellent in various characteristics (specifically in Q value). <P>SOLUTION: A surface acoustic wave resonator 1 is of a type of a device known as a 1 port type and comprises: a piezoelectric substrate 2; an IDT (comb-teeth electrode) 3 provided on the piezoelectric substrate 2; and a pair of reflectors 4 and 5 provided at both sides of the IDT 3. The IDT 3 has a plurality of electrode fingers 31a and 31b, and a second groove 25 is formed between the electrode fingers 31a and 31b of the piezoelectric substrate 2. On the other hand, the reflectors 4 and 5 have a plurality of conductor strips 41 and 51, and a first groove 26 which is deeper than the second groove 25 is formed between the conductor strips 41 and 51 of the piezoelectric substrate 2. The first groove 26 and the second groove 25 whose depth are different from each other are formed by utilizing a difference of their detachability to stripping liquid using a resist layer comprised of 2 kinds of resist materials with each having a different characteristic. <P>COPYRIGHT: (C)2012,JPO&INPIT |
