| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lateral (insulated gate bipolar transistor) IGBT capable of reducing a turn-on voltage, securing breakage resistance, and performing high speed switching, simultaneously. <P>SOLUTION: In a lateral IGBT, while a turn-on voltage is reduced by making a carrier concentration in an emitter side high by forming an n-type barrier layer 15, turn-off time is improved by configuring not to form the n-type barrier layer 15 between adjacent emitters. Moreover, according to this configuration, improvement of breakage resistance in switching is also possible. Hence, the lateral IGBT can reduce the turn-on voltage, secure the breakage resistance, and perform high speed switching simultaneously. <P>COPYRIGHT: (C)2012,JPO&INPIT |
