发明名称 SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor element and a manufacturing method of the same. <P>SOLUTION: The semiconductor element comprises: a first conductive line; a second conductive line; and a third conductive line each line including a line pattern extending in a first direction on a substrate and a bypass line pattern extending from an end of the line pattern in a direction different from the first direction. The bypass line pattern of the conductive line disposed in the middle is disposed between the bypass line patterns of the other conductive lines and the length is shorter. Accordingly, contact pads can be integrally formed with the bypass line patterns of the conductive lines. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012009869(A) 申请公布日期 2012.01.12
申请号 JP20110143327 申请日期 2011.06.28
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 YOO JANG-HYON;YI JONG-MN;PARK YOUNG-WU;KWAK DONG-HWA;KIM TAE-YON;HAN JI-HUN;RA JONG-HUN;YI DONG-SIK
分类号 H01L21/3205;H01L21/76;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/3205
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