发明名称 |
SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element and a manufacturing method of the same. <P>SOLUTION: The semiconductor element comprises: a first conductive line; a second conductive line; and a third conductive line each line including a line pattern extending in a first direction on a substrate and a bypass line pattern extending from an end of the line pattern in a direction different from the first direction. The bypass line pattern of the conductive line disposed in the middle is disposed between the bypass line patterns of the other conductive lines and the length is shorter. Accordingly, contact pads can be integrally formed with the bypass line patterns of the conductive lines. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012009869(A) |
申请公布日期 |
2012.01.12 |
申请号 |
JP20110143327 |
申请日期 |
2011.06.28 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
YOO JANG-HYON;YI JONG-MN;PARK YOUNG-WU;KWAK DONG-HWA;KIM TAE-YON;HAN JI-HUN;RA JONG-HUN;YI DONG-SIK |
分类号 |
H01L21/3205;H01L21/76;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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