| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a Schottky barrier diode (SBD) and a manufacturing method thereof capable of improving coverage of a barrier metal layer and, in addition, suppressing inverse direction current (IR) without a risk of concentration of stress onto a conductor embedded in a trench. <P>SOLUTION: In an SBD 11 according to the present invention, a trench 3 is formed on a surface 2a of a silicon substrate 2, and an insulation film 12 whose uppermost face 12a is made an inclined plane 22 is formed on the inner surface of the trench 3. In the trench 3, a conductor 13 is embedded so that its uppermost end part 21a locates below a side wall top face 3a of the trench 3. A barrier metal layer 14 and an electrode metal layer 15 are laminated so as to cover the surface 2a of the silicon substrate 2, the insulation film 12, and the conductor 13. <P>COPYRIGHT: (C)2012,JPO&INPIT |
