发明名称 VARIABLE RESISTIVE ELEMENT, SEMICONDUCTOR DEVICE INCLUDING THE VARIABLE RESISTIVE ELEMENT AND METHOD FOR OPERATING THE SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a variable resistive element, a semiconductor device including the variable resistive element and a method for operating the semiconductor device. <P>SOLUTION: A method for operating the semiconductor device is disclosed. The method for operating the semiconductor device writes first data by applying at least one reset pulse voltage so as to switch the variable resistive element from a first resistor to a second resistor, and writes second data by applying at least one set pulse voltage so as to switch the variable resistive element from the second resistor to the first resistor. The magnitude of the at least one set pulse voltage is smaller than the magnitude of the at least one reset pulse voltage, and the second resistor is larger than the first resistor. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012009124(A) 申请公布日期 2012.01.12
申请号 JP20110014987 申请日期 2011.01.27
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM YONG-BE;LEE CHANG-BUM;LEE TOSHU;KIM CHANG-JUN;LEE MYOUNG-JAE;CHANG MAN;YI SUN-YEOL
分类号 G11C13/00;H01L27/105;H01L45/00;H01L49/00 主分类号 G11C13/00
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