METHOD OF MANUFACTURING SOI MOS DEVICE STRUCTURE FOR SUPPRESSING FLOATING BODY EFFECT

摘要

A method of manufacturing a metal-oxide-semiconductor (MOS) structure suppressing silicon-on-insulator (SOI) floating body effect is provided. An active region of the SOI MOS structure includes a body region (70), an N-type source region, an N-type drain region(40), a heavily doped P-type region(60), wherein the N-type source region consists of a silicide(51) and an N-type silicon region(52) connected with the silicide(51), the heavily doped P-type region(60) is arranged between the silicide(51) and a buried insulating layer(20) and contacts with the silicide(51), the body region(70), the buried insulating layer(20) and a shallow trench isolation structure(30) respectively. The silicide (51) may release holes accumulated in the body region (70) of SOI MOS device by forming ohmic contact with the underlying heavily doped P-type region(60), thus suppressing floating body effect of the SOI MOS device, and having advantages of no increasing of chip area and compatible manufacturing techniques.