SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: A semiconductor integrated circuit device and a manufacturing method thereof are provided to miniaturize the occupied region of a device by forming the pitch of wave fluctuation, which is formed on the channel surface of an N channel MISFET(Metal Insulator Semiconductor Field Effect Transistor), to be narrow. CONSTITUTION: A semiconductor substrate includes a first and second major surface. A first N channel MISFET(Metal Insulator Semiconductor Field Effect Transistor)(Qnh) and a first P channel MISFET are formed the major surface of the semiconductor substrate. A first wave fluctuation(20n) is formed through the first source region and first drain region of the first N channel MISFET. A second wave fluctuation(20p) is formed through the second source region and second drain region of the first P channel MISFET. Ripple bottoms portions(30n, 30p) and reply portions are formed on the surface of channel regions(10n, 10p).